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Products Description
Product name: Xenon tetrafluoride
CAS: 13709-61-0
Molecular formula: F2Xe
Molecular weight: 169.29
EINECS: 237-260-1
Xenon difluoride Chemical Properties
Melting point | 129 °C(lit.) |
Boiling Point | 115.73°C (estimate) |
Density | 4.32 g/mL at 25 °C(lit.) |
Vapor pressure | 3.8 mm Hg ( 25 °C) |
Solubility | Reaction with H2O |
Form | Colorless monoclinic crystal |
Color | Colorless monoclinic crystals, crystalline |
Water solubility | reacts violently with H2O, forming Xe, O2, HF, and XeO3 [DOU83] |
Physical and chemical properties
Colorless, transparent tetragonal crystals. Relative density 4.32 (25/4℃), melting point 129℃, solid vapor pressure 4.6×133.322Pa (25℃). The vapor is also colorless and has a foul odor. It is easily soluble in anhydrous hydrogen fluoride, fluorinated nitrosyl tri(hydrogen fluoride) and iodine pentafluoride, but does not ionize. It can be reduced by hydrogen to produce xenon and hydrogen fluoride. It reacts with fluorine to produce xenon tetrafluoride or xenon hexafluoride. It hydrolyzes when it comes into contact with water, and the process is very complicated. It is produced by the reaction of xenon and fluorine under direct sunlight.
Strong Oxidant
Xenon difluoride (XeF2), also known as difluoroxenon, was discovered in 1962. It is a strong oxidant and fluorinating agent. It is colorless and transparent crystals, easily sublimates at room temperature, and has a foul odor. The melting point is 303K, with excellent selectivity and reaction speed. Xenon difluoride is easily decomposed in water, and can also be decomposed in neutral or alkaline solutions. It is relatively stable in acidic solutions, can burn in flammable materials, has strong oxidizing properties, and can fluorinate a variety of organic and inorganic compounds.
Uses
Preparing a xenon difluoride gas phase etching barrier layer comprises the following steps:
(1) spraying xenon difluoride gas onto the surface of the exposed barrier layer;
(2) using a light beam to irradiate only the barrier layer on the upper surface of the dielectric layer, so that the etching rate of the barrier layer on the upper surface of the dielectric layer is higher than the etching rate of the barrier layer on the side walls of the groove and the connection hole. The present invention improves the etching rate of the barrier layer on the upper surface of the dielectric layer by irradiating a light beam to the barrier layer on the upper surface of the dielectric k-layer, so that the etching rate of the barrier layer on the upper surface of the dielectric layer is higher than the etching rate of the barrier layer on the side walls of the groove and the connection hole, thereby avoiding excessive etching of the barrier layer on the side walls of the groove and the connection hole, improving the microscopic etching uniformity, and achieving better process effects.
Preparation method
Xenon difluoride is prepared by using xenon and fluorine as raw materials and reacting them under heating conditions.
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